4.3.3 MOS Field-Effect Transistor

Subcircuit reference for MOSFET.

Valid values for selector are: Spice, SpiceDC, SpiceAC, and SpiceNoise. Possible parameters are described below.

Large-Signal Model

The analog behavioral model included in the Analog Insydes model library has the following port characteristics:

where G denotes the Gate, D the Drain, S the Source, and B the Bulk, respectively. The port currents can be expressed in the port variables as follows:

Equivalent schematic for the DC and transient analysis

The large-signal model includes the following model parameters:

DC related model parameters.

Area related model parameters.

Parasitic resistance related model parameters.

Junction capacitance related model parameters.

Dynamic model parameters.

Temperature related model parameters.

Noise related model parameters.

Miscellaneous model parameters.

Parameter defaults set by global options.

The automatic reduction of the model complexity controlled via the global Analog Insydes option ModelLibrary influences the following parameters:

Simplification related model parameters.

Small-Signal Model

Equivalent schematic for the AC analysis for the level 1-3 model

Equivalent schematic for the AC analysis for the BSIM model (simulator PSpice)

Equivalent schematic for the AC analysis for the BSIM model (simulator Eldo)

The small-signal model includes the following model parameters:

Level 1-3 small-signal model parameters.

Additional small-signal model parameters for BSIM PSpice.

Additional small-signal model parameters for BSIM Eldo.

The automatic reduction of the model complexity controlled via the global Analog Insydes option ModelLibrary influences the following parameters:

Simplification related level 1-3 model parameters.

Simplification related BSIM Eldo model parameters.