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This diode model is an improved version of the simple diode model. It includes a series resistance, parallel conductance, and also models reverse breakdown. The model is divided into three parts:

• lower half of reversed bias region including breakdown: -Ids·(exp(-(vd+Bv)/(N·Vt)) + 1 - 2·exp(-Bv/(2·N·Vt)))
• upper half of reverse biased region and forward biased region before conduction: Ids·(exp(vd/(N·Vt)) - 1)
• forward biased region after conduction: iVdMax + (vd - VdMax)·diVdMax

Temperature dependent behaviour is modelled when useHeatPort=true. In that case, the Vt parameter is ignored, and Vt is computed as k·T/q, where

• k is Boltzmann's constant
• T is the heat port temperature.
• q is the electron charge.

• November 2015 by Stefan Vorkoetter
  implemented dynamic temperature dependency
  
• November 2015 by Kristin Majetta
  defined parameter Vt based on fixed temperature
  
• June 2014 by Stefan Vorkoetter, Kristin Majetta, and Christoph Clauss
  implemented
  
• October 2011 Stefan Vorkoetter - new model proposed.