WOLFRAM SYSTEMMODELER

HeatingNPN

Simple NPN BJT according to Ebers-Moll with heating port

Wolfram Language

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SystemModel["Modelica.Electrical.Analog.Semiconductors.HeatingNPN"]
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Information

This information is part of the Modelica Standard Library maintained by the Modelica Association.

This model is a simple model of a bipolar NPN junction transistor according to Ebers-Moll.
A heating port is added for thermal electric simulation. The heating port is defined in the Modelica.Thermal library.
A typical parameter set is (the parameter Vt is no longer used):

  Bf  Br  Is     Vak  Tauf    Taur  Ccs   Cje     Cjc     Phie  Me   PHic   Mc     Gbc    Gbe
  -   -   A      V    s       s     F     F       F       V     -    V      -      mS     mS
  50  0.1 1e-16  0.02 0.12e-9 5e-9  1e-12 0.4e-12 0.5e-12 0.8   0.4  0.8    0.333  1e-15  1e-15

References:

Vlach, J.; Singal, K.: Computer methods for circuit analysis and design. Van Nostrand Reinhold, New York 1983 on page 317 ff.

Connectors (4)

heatPort

Type: HeatPort_a

Description: Conditional heat port

C

Type: Pin

Description: Collector

B

Type: Pin

Description: Base

E

Type: Pin

Description: Emitter

Parameters (25)

useHeatPort

Value: true

Type: Boolean

Description: =true, if heatPort is enabled

T

Value: 293.15

Type: Temperature (K)

Description: Fixed device temperature if useHeatPort = false

Bf

Value: 50

Type: Real

Description: Forward beta

Br

Value: 0.1

Type: Real

Description: Reverse beta

Is

Value: 1.e-16

Type: Current (A)

Description: Transport saturation current

Vak

Value: 0.02

Type: InversePotential (ยน/V)

Description: Early voltage (inverse), 1/Volt

Tauf

Value: 0.12e-9

Type: Time (s)

Description: Ideal forward transit time

Taur

Value: 5e-9

Type: Time (s)

Description: Ideal reverse transit time

Ccs

Value: 1e-12

Type: Capacitance (F)

Description: Collector-substrate(ground) cap.

Cje

Value: 0.4e-12

Type: Capacitance (F)

Description: Base-emitter zero bias depletion cap.

Cjc

Value: 0.5e-12

Type: Capacitance (F)

Description: Base-coll. zero bias depletion cap.

Phie

Value: 0.8

Type: Voltage (V)

Description: Base-emitter diffusion voltage

Me

Value: 0.4

Type: Real

Description: Base-emitter gradation exponent

Phic

Value: 0.8

Type: Voltage (V)

Description: Base-collector diffusion voltage

Mc

Value: 0.333

Type: Real

Description: Base-collector gradation exponent

Gbc

Value: 1e-15

Type: Conductance (S)

Description: Base-collector conductance

Gbe

Value: 1e-15

Type: Conductance (S)

Description: Base-emitter conductance

EMin

Value: -100

Type: Real

Description: if x < EMin, the exp(x) function is linearized

EMax

Value: 40

Type: Real

Description: if x > EMax, the exp(x) function is linearized

Tnom

Value: 300.15

Type: Temperature (K)

Description: Parameter measurement temperature

XTI

Value: 3

Type: Real

Description: Temperature exponent for effect on Is

XTB

Value: 0

Type: Real

Description: Forward and reverse beta temperature exponent

EG

Value: 1.11

Type: Real

Description: Energy gap for temperature effect on Is

NF

Value: 1.0

Type: Real

Description: Forward current emission coefficient

NR

Value: 1.0

Type: Real

Description: Reverse current emission coefficient

Used in Examples (1)

HeatingNPN_OrGate

Heating NPN Or Gate