WOLFRAM SYSTEM MODELER

NPN

Simple NPN BJT according to Ebers-Moll with heating port

Wolfram Language

In[1]:=
SystemModel["Modelica.Electrical.Analog.Semiconductors.NPN"]
Out[1]:=

Information

This information is part of the Modelica Standard Library maintained by the Modelica Association.

This model is a simple model of a bipolar NPN junction transistor according to Ebers-Moll.
A heating port is added for thermal electric simulation. The heating port is defined in the Modelica.Thermal library.
A typical parameter set is (the parameter Vt is no longer used):

Bf  Br  Is     Vak  Tauf    Taur  Ccs   Cje     Cjc     Phie  Me   PHic   Mc     Gbc    Gbe
-   -   A      V    s       s     F     F       F       V     -    V      -      mS     mS
50  0.1 1e-16  0.02 0.12e-9 5e-9  1e-12 0.4e-12 0.5e-12 0.8   0.4  0.8    0.333  1e-15  1e-15

References: [Vlach1983]

Parameters (30)

useHeatPort

Value: useTemperatureDependency

Type: Boolean

Description: = true, if heatPort is enabled

T

Value: 293.15

Type: Temperature (K)

Description: Fixed device temperature if useHeatPort = false

Bf

Value: 50

Type: Real

Description: Forward beta

Br

Value: 0.1

Type: Real

Description: Reverse beta

Is

Value: 1e-16

Type: Current (A)

Description: Transport saturation current

Vak

Value: 0.02

Type: InversePotential (1/V)

Description: Early voltage (inverse), 1/Volt

Tauf

Value: 0.12e-9

Type: Time (s)

Description: Ideal forward transit time

Taur

Value: 5e-9

Type: Time (s)

Description: Ideal reverse transit time

Ccs

Value: 1e-12

Type: Capacitance (F)

Description: Collector-substrate(ground) cap.

Cje

Value: 0.4e-12

Type: Capacitance (F)

Description: Base-emitter zero bias depletion cap.

Cjc

Value: 0.5e-12

Type: Capacitance (F)

Description: Base-coll. zero bias depletion cap.

Phie

Value: 0.8

Type: Voltage (V)

Description: Base-emitter diffusion voltage

Me

Value: 0.4

Type: Real

Description: Base-emitter gradation exponent

Phic

Value: 0.8

Type: Voltage (V)

Description: Base-collector diffusion voltage

Mc

Value: 0.333

Type: Real

Description: Base-collector gradation exponent

Gbc

Value: 1e-15

Type: Conductance (S)

Description: Base-collector conductance

Gbe

Value: 1e-15

Type: Conductance (S)

Description: Base-emitter conductance

EMin

Value: -100

Type: Real

Description: If x < EMin, the exp(x) function is linearized

EMax

Value: 40

Type: Real

Description: If x > EMax, the exp(x) function is linearized

useTemperatureDependency

Value: false

Type: Boolean

Description: = true, if parameters Bf, Br, Is and Vt depend on temperature

Vt

Value: 0.02585

Type: Voltage (V)

Description: Voltage equivalent of temperature

Tnom

Value: 300.15

Type: Temperature (K)

Description: Parameter measurement temperature

XTI

Value: 3

Type: Real

Description: Temperature exponent for effect on Is

XTB

Value: 0

Type: Real

Description: Forward and reverse beta temperature exponent

EG

Value: 1.11

Type: Voltage (V)

Description: Energy gap for temperature effect on Is

NF

Value: 1.0

Type: Real

Description: Forward current emission coefficient

NR

Value: 1.0

Type: Real

Description: Reverse current emission coefficient

IC

Value: 0

Type: Voltage (V)

Description: Initial value of collector to substrate voltage

UIC

Value: false

Type: Boolean

Description: Decision if initial value IC should be used

useSubstrate

Value: false

Type: Boolean

Description: = false, if substrate is implicitly grounded

Connectors (5)

heatPort

Type: HeatPort_a

Description: Conditional heat port

C

Type: Pin

Description: Collector

B

Type: Pin

Description: Base

E

Type: Pin

Description: Emitter

S

Type: NegativePin

Description: Substrate

Used in Examples (1)

HeatingNPN_NORGate

Modelica.Electrical.Analog.Examples

Heating NPN NOR Gate

Used in Components (1)

Transistor

Modelica.Electrical.Analog.Examples.Utilities

Transistor with resistance an capacitance

Revisions

  • March 11, 2009 by Christoph Clauss
    conditional heat port added
  • March 20, 2004 by Christoph Clauss
    implemented