WOLFRAM SYSTEM MODELER
PNPSimple PNP BJT according to Ebers-Moll with heating port |
SystemModel["Modelica.Electrical.Analog.Semiconductors.PNP"]
This information is part of the Modelica Standard Library maintained by the Modelica Association.
This model is a simple model of a bipolar PNP junction transistor according to Ebers-Moll.
A heating port is added for thermal electric simulation. The heating port is defined in the Modelica.Thermal library.
A typical parameter set is (the parameter Vt is no longer used):
Bf Br Is Vak Tauf Taur Ccs Cje Cjc Phie Me PHic Mc Gbc Gbe - - A V s s F F F V - V - mS mS 50 0.1 1e-16 0.02 0.12e-9 5e-9 1e-12 0.4e-12 0.5e-12 0.8 0.4 0.8 0.333 1e-15 1e-15
References: [Vlach1983]
useHeatPort |
Value: useTemperatureDependency Type: Boolean Description: = true, if heatPort is enabled |
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T |
Value: 293.15 Type: Temperature (K) Description: Fixed device temperature if useHeatPort = false |
Bf |
Value: 50 Type: Real Description: Forward beta |
Br |
Value: 0.1 Type: Real Description: Reverse beta |
Is |
Value: 1e-16 Type: Current (A) Description: Transport saturation current |
Vak |
Value: 0.02 Type: InversePotential (1/V) Description: Early voltage (inverse), 1/Volt |
Tauf |
Value: 0.12e-9 Type: Time (s) Description: Ideal forward transit time |
Taur |
Value: 5e-9 Type: Time (s) Description: Ideal reverse transit time |
Ccs |
Value: 1e-12 Type: Capacitance (F) Description: Collector-substrate(ground) cap. |
Cje |
Value: 0.4e-12 Type: Capacitance (F) Description: Base-emitter zero bias depletion cap. |
Cjc |
Value: 0.5e-12 Type: Capacitance (F) Description: Base-coll. zero bias depletion cap. |
Phie |
Value: 0.8 Type: Voltage (V) Description: Base-emitter diffusion voltage |
Me |
Value: 0.4 Type: Real Description: Base-emitter gradation exponent |
Phic |
Value: 0.8 Type: Voltage (V) Description: Base-collector diffusion voltage |
Mc |
Value: 0.333 Type: Real Description: Base-collector gradation exponent |
Gbc |
Value: 1e-15 Type: Conductance (S) Description: Base-collector conductance |
Gbe |
Value: 1e-15 Type: Conductance (S) Description: Base-emitter conductance |
EMin |
Value: -100 Type: Real Description: If x < EMin, the exp(x) function is linearized |
EMax |
Value: 40 Type: Real Description: If x > EMax, the exp(x) function is linearized |
useTemperatureDependency |
Value: false Type: Boolean Description: = true, if parameters Bf, Br, Is and Vt depend on temperature |
Vt |
Value: 0.02585 Type: Voltage (V) Description: Voltage equivalent of temperature |
Tnom |
Value: 300.15 Type: Temperature (K) Description: Parameter measurement temperature |
XTI |
Value: 3 Type: Real Description: Temperature exponent for effect on Is |
XTB |
Value: 0 Type: Real Description: Forward and reverse beta temperature exponent |
EG |
Value: 1.11 Type: Voltage (V) Description: Energy gap for temperature effect on Is |
NF |
Value: 1.0 Type: Real Description: Forward current emission coefficient |
NR |
Value: 1.0 Type: Real Description: Reverse current emission coefficient |
IC |
Value: 0 Type: Voltage (V) Description: Initial value of collector to substrate voltage |
UIC |
Value: false Type: Boolean Description: Decision if initial value IC should be used |
useSubstrate |
Value: false Type: Boolean Description: = false, if substrate is implicitly grounded |
heatPort |
Type: HeatPort_a Description: Conditional heat port |
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C |
Type: Pin Description: Collector |
|
B |
Type: Pin Description: Base |
|
E |
Type: Pin Description: Emitter |
|
S |
Type: NegativePin Description: Substrate |
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