WOLFRAM SYSTEM MODELER
NMOSSimple NMOS transistor with heating port |
SystemModel["Modelica.Electrical.Analog.Semiconductors.NMOS"]
This information is part of the Modelica Standard Library maintained by the Modelica Association.
The NMOS model is a simple model of a n-channel metal-oxide semiconductor FET. It differs slightly from the device used in the SPICE simulator. For more details please care for [Spiro1990].
A heating port is added for thermal electric simulation. The heating port is defined in the Modelica.Thermal library.
The model does not consider capacitances. A high drain-source resistance RDS is included to avoid numerical difficulties.
W L Beta Vt K2 K5 dW dL m m A/V^2 V - - m m 12.e-6 4.e-6 0.062e-3 -4.5 0.24 0.61 -1.2e-6 -0.9e-6 depletion 60.e-6 3.e-6 0.048e-3 0.1 0.08 0.68 -1.2e-6 -0.9e-6 enhancement 12.e-6 4.e-6 0.0625e-3 -0.8 0.21 0.78 -1.2e-6 -0.9e-6 zero 50.e-6 8.e-6 0.0299e-3 0.24 1.144 0.7311 -5.4e-6 -4.e-6 20.e-6 6.e-6 0.041e-3 0.8 1.144 0.7311 -2.5e-6 -1.5e-6 30.e-6 9.e-6 0.025e-3 -4.0 0.861 0.878 -3.4e-6 -1.74e-6 30.e-6 5.e-6 0.031e-3 0.6 1.5 0.72 0 -3.9e-6 50.e-6 6.e-6 0.0414e-3 -3.8 0.34 0.8 -1.6e-6 -2.e-6 depletion 50.e-6 5.e-6 0.03e-3 0.37 0.23 0.86 -1.6e-6 -2.e-6 enhancement 50.e-6 6.e-6 0.038e-3 -0.9 0.23 0.707 -1.6e-6 -2.e-6 zero 20.e-6 4.e-6 0.06776e-3 0.5409 0.065 0.71 -0.8e-6 -0.2e-6 20.e-6 4.e-6 0.06505e-3 0.6209 0.065 0.71 -0.8e-6 -0.2e-6 20.e-6 4.e-6 0.05365e-3 0.6909 0.03 0.8 -0.3e-6 -0.2e-6 20.e-6 4.e-6 0.05365e-3 0.4909 0.03 0.8 -0.3e-6 -0.2e-6 12.e-6 4.e-6 0.023e-3 -4.5 0.29 0.6 0 0 depletion 60.e-6 3.e-6 0.022e-3 0.1 0.11 0.65 0 0 enhancement 12.e-6 4.e-6 0.038e-3 -0.8 0.33 0.6 0 0 zero 20.e-6 6.e-6 0.022e-3 0.8 1 0.66 0 0
References: [Spiro1990]
useHeatPort |
Value: useTemperatureDependency Type: Boolean Description: = true, if heatPort is enabled |
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T |
Value: 293.15 Type: Temperature (K) Description: Fixed device temperature if useHeatPort = false |
W |
Value: 20.e-6 Type: Length (m) Description: Width |
L |
Value: 6.e-6 Type: Length (m) Description: Length |
Beta |
Value: 0.041e-3 Type: Transconductance (A/V²) Description: Transconductance parameter |
Vt |
Value: 0.8 Type: Voltage (V) Description: Zero bias threshold voltage |
K2 |
Value: 1.144 Type: Real Description: Bulk threshold parameter |
K5 |
Value: 0.7311 Type: Real Description: Reduction of pinch-off region |
dW |
Value: -2.5e-6 Type: Length (m) Description: Narrowing of channel |
dL |
Value: -1.5e-6 Type: Length (m) Description: Shortening of channel |
RDS |
Value: 1e7 Type: Resistance (Ω) Description: Drain-Source-Resistance |
useTemperatureDependency |
Value: false Type: Boolean Description: = true, if parameters Beta, K2 and Vt depend on temperature |
Tnom |
Value: 300.15 Type: Temperature (K) Description: Parameter measurement temperature |
kvt |
Value: -6.96e-3 Type: Real Description: Fitting parameter for Vt |
kk2 |
Value: 6e-4 Type: Real Description: Fitting parameter for K2 |
heatPort |
Type: HeatPort_a Description: Conditional heat port |
|
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D |
Type: Pin Description: Drain |
|
G |
Type: Pin Description: Gate |
|
S |
Type: Pin Description: Source |
|
B |
Type: Pin Description: Bulk |
Modelica.Electrical.Analog.Examples Heating MOS Inverter |
Modelica.Electrical.Analog.Examples.Utilities CMOS NAND Gate (see Tietze/Schenk, page 157) |