WOLFRAM SYSTEMMODELER

PMOS

Simple MOS Transistor

Wolfram Language

In[1]:=
Click for copyable input
SystemModel["Modelica.Electrical.Analog.Semiconductors.PMOS"]
Out[1]:=

Information

This information is part of the Modelica Standard Library maintained by the Modelica Association.

The PMOS model is a simple model of a p-channel metal-oxide semiconductor FET. It differs slightly from the device used in the SPICE simulator. For more details please care for H. Spiro.

The model does not consider capacitances. A high drain-source resistance RDS is included to avoid numerical difficulties.

Please note: In case of useHeatPort=true the temperature dependence of the electrical behavior is not modelled yet. The parameters are not temperature dependent.

References:
Spiro, H.: Simulation integrierter Schaltungen. R. Oldenbourg Verlag Muenchen Wien 1990.

Some typical parameter sets are:

  W       L      Beta        Vt    K2     K5      DW       DL
  m       m      A/V^2       V     -      -       m        m
  50.e-6  8.e-6  0.0085e-3  -0.15  0.41   0.839  -3.8e-6  -4.0e-6
  20.e-6  6.e-6  0.0105e-3  -1.0   0.41   0.839  -2.5e-6  -2.1e-6
  30.e-6  5.e-6  0.0059e-3  -0.3   0.98   1.01    0       -3.9e-6
  30.e-6  5.e-6  0.0152e-3  -0.69  0.104  1.1    -0.8e-6  -0.4e-6
  30.e-6  5.e-6  0.0163e-3  -0.69  0.104  1.1    -0.8e-6  -0.4e-6
  30.e-6  5.e-6  0.0182e-3  -0.69  0.086  1.06   -0.1e-6  -0.6e-6
  20.e-6  6.e-6  0.0074e-3  -1.    0.4    0.59    0        0

Connectors (5)

heatPort

Type: HeatPort_a

Description: Conditional heat port

D

Type: Pin

Description: Drain

G

Type: Pin

Description: Gate

S

Type: Pin

Description: Source

B

Type: Pin

Description: Bulk

Parameters (11)

useHeatPort

Value: false

Type: Boolean

Description: =true, if heatPort is enabled

T

Value: 293.15

Type: Temperature (K)

Description: Fixed device temperature if useHeatPort = false

W

Value: 20.0e-6

Type: Length (m)

Description: Width

L

Value: 6.0e-6

Type: Length (m)

Description: Length

Beta

Value: 0.0105e-3

Type: Transconductance (A/V²)

Description: Transconductance parameter

Vt

Value: -1.0

Type: Voltage (V)

Description: Zero bias threshold voltage

K2

Value: 0.41

Type: Real

Description: Bulk threshold parameter

K5

Value: 0.839

Type: Real

Description: Reduction of pinch-off region

dW

Value: -2.5e-6

Type: Length (m)

Description: Narrowing of channel

dL

Value: -2.1e-6

Type: Length (m)

Description: Shortening of channel

RDS

Value: 1.e+7

Type: Resistance (Ω)

Description: Drain-Source-Resistance

Used in Components (1)

Nand

CMOS NAND Gate (see Tietze/Schenk, page 157)